In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilane

IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

H. Matsunami, S. Nishino, H. Ono · IEEE Transactions on Electron Devices · 1981 · 110 citations

Engineering, Materials Engineering, Materials Science +15

Dielectric function and reflectivity of 3C–silicon carbide and the component perpendicular to the <i>c</i> axis of 6H–silicon carbide in the energy region 1.5–9.5 eV

S. Logothetidis, J. Petalas · Journal of Applied Physics · 1996 · 85 citations

Natural Sciences, Materials Engineering, Materials Science +17

Silicon carbide bipolar transistor

Waldemar von Münch, P. Hoeck · Solid-State Electronics · 1978 · 66 citations

Engineering, Electrical Engineering, Microelectronics +11

Surface-Structure-Controlled Heteroepitaxial Growth of 3C–SiC(001)3×2 on Si(001): Simulations and Experiments

Makoto Kitabatake Greene · Japanese Journal of Applied Physics · 1996 · 41 citations

Engineering, Materials Engineering, Materials Science +17

Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Kanji Yasui, Kunio Asada, Tomohiro Maeda et al. · Applied Surface Science · 2001 · 40 citations

Engineering, Materials Engineering, Materials Science +14