High-performance SOI MESFET with modified depletion region using a triple recessed gate for RF applications

CMOS technology characterization for analog and RF design

Behzad Razavi · IEEE Journal of Solid-State Circuits · 1999 · 233 citations

Engineering, Electrical Engineering, Analog Electronics +16

CMOS-Compatible SOI MESFETs With High Breakdown Voltage

Joseph Ervin, Asha Balijepalli, Punarvasu Joshi et al. · IEEE Transactions on Electron Devices · 2006 · 93 citations

Engineering, Electrical Engineering, Microelectronics +16

Improved performance of SiC MESFETs using double-recessed structure

C.L. Zhu, Rusli Rusli, C. C. Tin et al. · Microelectronic Engineering · 2005 · 77 citations

Engineering, Electrical Engineering, Materials Science +13

New High-Voltage ($>$ 1200 V) MOSFET With the Charge Trenches on Partial SOI

Xiaorong Luo, Bo Zhang, Zhaoji Li · IEEE Transactions on Electron Devices · 2008 · 75 citations

Engineering, Electrical Engineering, Microelectronics +16

Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides

Yuichiro Mitani, Hideki Satake, Yasushi Nakasaki et al. · IEEE Transactions on Electron Devices · 2003 · 48 citations

Engineering, Electrical Engineering, Materials Science +17