Activation volume for antimony diffusion in silicon and implications for strained films

Abstract

The diffusivity of Sb in Si is retarded by pressure, characterized at 860 °C by an activation volume of V*=+0.07±0.02 times the Si atomic volume. V* is close to values inferred from atomistic calculations for a vacancy mechanism. Our results for hydrostatic pressure are used to predict the effect of biaxial strain on Sb diffusion. The prediction matches measured behavior for Sb diffusion in biaxially strained Si and Si–Ge films. This work lends additional support to the predominance of the vacancy mechanism for Sb diffusion and demonstrates the first steps in the development of a capability for predicting the effect of nonhydrostatic stress on diffusion.