Concepedia
Statistics
Publications
8
Citations
296
H-Index
Active since
1997
Affiliations
Harvard University(Current)
Los Alamos National Laboratory
Eaton (United States)
Eaton (Taiwan)
Evans Analytical Group (United States)
Hans-J. Gossmann is an author at Harvard University specializing in materials science, semiconductor materials, and materials engineering.
Publications per year
1997–2006
Interstitial defects in silicon from 1–5 keV Si+ ion implantation
Aditya Agarwal, T. E. Haynes, D. J. Eaglesham et al. · Applied Physics Letters · 1997 · 66 citations
Natural Sciences, Materials Engineering, Materials Science +17
Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys
Michael J. Aziz, Hans-J. Gossmann, S. Mitha et al. · Physical Review B · 2006 · 65 citations
Natural Sciences, Materials Engineering, Materials Science +16
Sputtering rate change and surface roughening during oblique and normal incidence O2+ bombardment of silicon, with and without oxygen flooding
C. W. Magee, Gary Mount, Stephen P. Smith et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 39 citations
Natural Sciences, Materials Engineering, Materials Science +15
Activation volume for boron diffusion in silicon and implications for strained films
Yuechao Zhao, Michael J. Aziz, Hans-J. Gossmann et al. · Applied Physics Letters · 1999 · 33 citations
Natural Sciences, Materials Science, Physics +16
Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions
Aditya Agarwal, Hans-J. Gossmann, A. T. Fiory · Journal of Electronic Materials · 1999 · 28 citations
Engineering, Materials Engineering, Materials Science +14
1–5 of 8