Development and optimization of scanning spreading resistance microscopy for measuring the two‐dimensional carrier profile in solar cell structures

Abstract

Abstract Within this work, we have explored the use of scanning spreading resistance microscopy (SSRM) on advanced solar cell structures. Three main topics, corresponding to three important needs, were targeted. First, we have analyzed the highly doped regions at the frontside of solar cells. The influence of the surface roughness, hindering the use of other techniques ( e.g ., secondary ion mass spectrometry, SIMS), and the phosphorus diffusion along grains for multicrystalline silicon (mc‐Si) have been studied quantitatively as they may affect substantially the electrical properties of solar cells. Secondly, we have explored local backside contacts manufactured using new techniques like laser ablation followed by dopant diffusion. Having a better knowledge of the two‐dimensional (2D)‐dopant distribution is a subject of growing interest. Finally, we have studied electrical properties of grain‐boundary and intragrain defects in polycrystalline silicon (pc‐Si) layers as they may play a major role in the electrical performances of the solar cells.