Anomalous transient diffusion of ion implanted dopants: A phenomenological model

Formation of stacking faults and enhanced diffusion in the oxidation of silicon

S. M. Hu · Journal of Applied Physics · 1974 · 435 citations

Engineering, Materials Engineering, Materials Science +17

Energy beam solid interactions and transient thermal processing

Van Tien Nguyen, A. G. Cullis · 1985 · 262 citations

Engineering, Mechanical Engineering, Physics +14

Energy beam-solid interactions and transient thermal processing/1984

W. L. Brown · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 250 citations

Engineering, Mechanical Engineering, Physics +14

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

A. E. Michel, W. Rausch, Paul Ronsheim et al. · Applied Physics Letters · 1987 · 211 citations

Engineering, Materials Science, Physics +17

Transient boron diffusion in ion-implanted crystalline and amorphous silicon

T. O. Sedgwick, A. E. Michel, V. R. Deline et al. · Journal of Applied Physics · 1988 · 174 citations

Engineering, Materials Engineering, Materials Science +17