Current SiC technology for power electronic devices beyond Si

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami, Tsunenobu Kimoto · Materials Science and Engineering R Reports · 1997 · 609 citations

Engineering, Materials Engineering, Materials Science +14

Investigation of growth processes of ingots of silicon carbide single crystals

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1978 · 570 citations

Natural Sciences, Materials Engineering, Materials Science +14

Ultrahigh-quality silicon carbide single crystals

Daisuke Nakamura, Itaru Gunjishima, S. Yamaguchi et al. · Nature · 2004 · 423 citations

Natural Sciences, Materials Science, Physics +12

High performance of high-voltage 4H-SiC Schottky barrier diodes

Akira Itoh, Tsunenobu Kimoto, H. Matsunami · IEEE Electron Device Letters · 1995 · 240 citations

Engineering, Electrical Engineering, Materials Science +15

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

Hiroshi Yano, T. Hirao, Tsunenobu Kimoto et al. · IEEE Electron Device Letters · 1999 · 212 citations

Engineering, Electrical Engineering, Materials Science +13