Applied Physics Letters · 1989 · 13 citations · 9 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDislocations In SemiconductorsEpitaxial GrowthSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor SurfacesStrain EngineeringDislocation PhysicsMolecular Beam EpitaxySemiconductor NanostructuresStrain EffectsStrained-layer HeterostructuresSuperlattice GrowthSuperlattice MaterialsX-ray Diffraction Analysis
Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double crystal x-ray diffraction studies indicate that the narrow interfacial regions are locally strained as a result of the growth sequence during gas-source molecular beam epitaxy.
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