Applied Physics Letters · 1994 · 14 citations · 22 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor MaterialsThin FilmsChemical Vapor DepositionEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSilicon MaterialsSurface PhysicsAtomic Layer EpitaxyEpitaxial Film GrowthEpitaxial Growth KineticsFilm Growth MechanismsReaction Rate ConstantsStrained Layer StructuresSuperlattice GrowthThin-film Growth Mechanisms
Growth rates and compositions are reported for GeSi alloy films and superlattices epitaxially grown on both Ge(100) and Si(100) substrates using disilane and germane source gases in an ultrahigh vacuum chemical vapor deposition chamber. Although the growth rate changes rapidly with temperature the composition is nearly independent of it. Specifically, we find that the order of the adsorption reaction for disilane and germane is the same, resulting in the composition being determined by the partial pressures and by the ratio of the adsorption reaction rate constants. This ratio depends very weakly on temperature, if at all, and appears to vary slightly with the layer composition.
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