Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates

Abstract

We have studied the influence of matrix materials on the self-organization of InAs nanostructures grown on InP substrates by molecular-beam epitaxy. Our results show that InAs quantum dots are formed on InAlGaAs, whereas quantum-wire-like structures are produced on InAlAs and InGaAs. Tuning from vertical anticorrelation in InAs/InAlAs superlattices to vertical correlation in InAs/InGaAs and InAs/InAlGaAs superlattices is observed, which is explained by the size effects in the nanostructure–nanostructure interaction.