Nanostructured Semiconductors

Nanostructured Semiconductors is a class of semiconducting materials characterized by intentional structural confinement at the nanoscale, where quantum confinement effects and high surface-to-volume ratios distinguish them from bulk semiconductors.

1.2K

Publications

85.8K

Citations

5.4K

Authors

1.3K

Institutions

Publications per year

2017–2026

330

Authors

5.4K

  1. GJ
    Gregory J. Salamo

    University of Arkansas at Fayetteville, United States

    7 publications · 188 citations

    7

    h-index

  2. MD
    M. Dähne

    Technische Universität Berlin, Germany

    7 publications · 156 citations

    7

    h-index

  3. DG
    Dmitri Golberg

    National Institute for Materials Science, Japan

    7 publications · 513 citations

    7

    h-index

  4. YB
    Yoshio Bando

    National Institute for Materials Science, Japan

    7 publications · 513 citations

    7

    h-index

  5. AM
    A. Madhukar

    University of Southern California, United States

    6 publications · 147 citations

    6

    h-index

1–5 of 5.4K

Venues

  1. Nano Letters

    58 publications · 4.5K citations

    35

    h-index

  2. Applied Physics Letters

    67 publications · 3.6K citations

    30

    h-index

  3. Physical Review Letters

    PRL · 27 publications · 2.8K citations

    25

    h-index

  4. Journal of Applied Physics

    46 publications · 2.5K citations

    23

    h-index

  5. Advanced Functional Materials

    27 publications · 2.4K citations

    21

    h-index

1–5