Concepedia

Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide

I. A. Bobrovnikova, L. G. Lavrent’eva, M.P. Rusaikin, M. D. Vilisova

Journal of Crystal Growth · 1992 · 10 citations · 15 references

DOI

Concepts

References

15

Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center

E. W. Williams · Physical Review · 1968 · 302 citations

, , +15

Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenide

D.T.J. Hurle · Journal of Physics and Chemistry of Solids · 1979 · 145 citations

, , +14

Electron mobility in <i>n</i>-type GaAs at 77 K: Determination of the compensation ratio

W. Walukiewicz, J. Łagowski, H. C. Gatos · Journal of Applied Physics · 1982 · 86 citations

, , +16

The system Ga–As–Sn: Incorporation of Sn into GaAs

M. B. Panish · Journal of Applied Physics · 1973 · 81 citations

, , +17

Solubility and point defect-dopant interactions in GaAs —I

D.T.J. Hurle · Journal of Physics and Chemistry of Solids · 1979 · 79 citations

, , +14