Electron mobility in <i>n</i>-type GaAs at 77 K: Determination of the compensation ratio

Abstract

Electron-mobility values in n-type GaAs at 77 K were computed utilizing a variational procedure and taking into account all major scattering mechanisms. Mobility values are tabulated as a function of electron concentrations, providing a convenient means for the determination of the compensation ratio, i.e., the determination of the total concentration of ionized impurities.