Solubility and point defect-dopant interactions in GaAs —I

Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide

R. N. Hall, Joshua Racette · Journal of Applied Physics · 1964 · 617 citations

Natural Sciences, Materials Science, Physics +15

Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center

E. W. Williams · Physical Review · 1968 · 302 citations

Natural Sciences, Materials Science, Physics +15

A new mechanism for interstistitial migration

J. C. Bourgoin, J. W. Corbett · Physics Letters A · 1972 · 253 citations

Life Sciences, Biology, Intracellular Transport +3

Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors

J. A. Van Vechten · Journal of The Electrochemical Society · 1975 · 217 citations

Natural Sciences, Materials Science, Physics +17

Dislocation climb model in compound semiconductors with zinc blende structure

P. M. Petroff, Lionel C. Kimerling · Applied Physics Letters · 1976 · 172 citations

Engineering, Materials Engineering, Materials Science +17