Journal of Microelectromechanical Systems · 2000 · 78 citations · 27 references
EngineeringComputational EngineeringMaterials EngineeringComputational Materials ScienceMicrofabricationPattern FormationCellular AutomataEtching ProcessesMicrofabrication ProcessesMicromachiningSurface MicromachiningThin Film EtchingAnisotropic EtchingContinuous Cellular AutomataEtch RateEtch Rate ModelingEtchingPassivationReactive Ion EtchingSurface Passivation Layers
The paper develops AGES, an anisotropic crystalline etching simulation based on a continuous cellular automata model. The authors implement a 3‑D dynamic CA technique that speeds simulation, reduces memory usage, and can model successive micromachining steps while generating accurate etch‑rate diagrams. AGES achieves higher spatial resolution and accuracy than conventional and stochastic CA methods, runs on standard PCs, and produces accurate etch‑rate diagrams for anisotropic etching.
In this paper, we present results on the development of an anisotropic crystalline etching simulation (AGES) program based on a continuous cellular automata (CA) model. The program provides improved spatial resolution and accuracy compared with the conventional and stochastic CA methods. Implementation of a three-dimensional (3-D) dynamic CA technique provides increased simulation speed and reduced memory requirement. The first AGES software based on common personal computer platforms has been realized for simulation of micromachining processes and visualizing results in 3-D space. The software is uniquely capable of simulating the resultant profile following a series of micromachining steps, including surface passivation, reactive ion etching, as well as wet chemical bulk etching. A novel method for accurately obtaining the etch-rate diagram of anisotropic etching using both experimental and numerical techniques has been developed.
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