IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1994 · 37 citations · 20 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesTransport PhenomenaDevice ModelingDevice SimulationElectronic Transport ModelingMonte Carlo MethodsMonte Carlo SimulationSimulation MethodsDiffusion ModelsDrift-diffusion ModelingDrift-diffusion SimulationHybrid SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMonte Carlo Device SimulationMosfet ModelingPhysics-based Device Modeling
A hybrid simulator suitable for modeling small semiconductor devices has been developed in which Monte Carlo and drift-diffusion models are combined. In critical device regions, the position-dependent coefficients of an extended drift-diffusion equation are extracted from a Monte Carlo simulation. Criteria for identifying these regions are described. Additional features which make the code more efficient are presented. First, a free-flight time calculation method using a new self-scattering algorithm is described. It allows for an efficient reduction of self-scattering events. Second, a unique Monte Carlo-Poisson coupling scheme has been developed which converges faster than all presently known schemes. It exploits the so-called Monte Carlo-drift diffusion coupling technique, which also forms the basis of the hybrid method. The simulator has been used to model submicron MOSFET's with gate lengths down to 0.15 /spl mu/m. In addition to the non-local effects occurring in these devices, the performance of the hybrid simulation method is analyzed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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