An analytical two-dimensional model for silicon MESFETs

Abstract

A model that predicts small-geometry effects in Si MESFETs has been developed. It is based on a two-dimensional (2-D) analytical solution of Poisson's equation in the subthreshold regime that applies to the junction-isolated structure typical of silicon devices. The model is in excellent agreement with numerical simulations from the PISCES 2-D device analysis program. The analytical model provides the physical basis for a subthreshold current model for small-geometry MESFETs. A scaling scheme for MESFETs, derived from the analytical model, that predicts a minimum-acceptable gate length of 0.15 mu m for these devices is proposed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>