Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

D. E. Aspnes, A. A. Studna · Physical review. B, Condensed matter · 1983 · 3.9K citations

Optical Materials, Engineering, Reflectance Measurements +30

Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

L. Csepregi, Eamonn Kennedy, J. W. Mayer et al. · Journal of Applied Physics · 1978 · 583 citations

Engineering, Crystal Growth Technology, Silicon On Insulator +17

Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon

Akihisa Matsuda, Katsuhiko Nomoto, Yoshiaki Takeuchi et al. · Surface Science · 1990 · 262 citations

Materials Science, Silyl Radicals, Loss Probabilities +8

Optical functions of chemical vapor deposited thin-film silicon determined by spectroscopic ellipsometry

G. E. Jellison, M. F. Chisholm, S. M. Gorbatkin · Applied Physics Letters · 1993 · 246 citations

Optical Materials, Engineering, Ellipsometry Data +19

A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition

Pere Roca I Cabarrocas, J.B. Chevrier, J. Huc et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 231 citations · Full text

Materials Science, New Reactor, Electrical Engineering +14