Applied Physics Letters · 1989 · 64 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportChemical Vapor DepositionDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCarrier ConcentrationDouble HeterostructuresElectrical PropertiesHeterostructuresInterfacial PropertiesInterfacial Transport PropertiesModulation DopingTransport In Heterostructures
High quality Si/Si1−xGex/Si p-type modulation-doped double heterostructures with x=0.12 and 0.15 have been grown by the ultrahigh vacuum/chemical vapor deposition technique. Hole mobilities as high as ∼3700 cm2/V s at 14 K have been obtained for heterostructures with x=0.12, at a sheet carrier concentration of ∼8×1011 cm−2. This is the highest hole mobility ever reported for p-type Si material at these carrier concentrations. The electrical properties of these heterostructures at low temperatures are those expected of a two-dimensional hole gas at Si/SiGe and SiGe/Si heterointerfaces. The high hole mobility is indicative of excellent interfacial properties. Peak mobilities were observed to depend on the level and proximity of remote B dopant species, as well as the Ge content of the alloyed layers.
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Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations
Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures
R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations