Quality improvement of single crystal 4H SiC grown with a purified β-SiC powder source

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

Ultrahigh-quality silicon carbide single crystals

Daisuke Nakamura, Itaru Gunjishima, S. Yamaguchi et al. · Nature · 2004 · 423 citations

Natural Sciences, Materials Science, Physics +12

Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface

C. Önneby, C. G. Pantano · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 286 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of surface structure of SiC nano-sized powder analyzed by X-ray photoelectron spectroscopy on basic powder characteristics

Kazuya Shimoda, Joon-Soo Park, Tatsuya Hinoki et al. · Applied Surface Science · 2007 · 145 citations

Natural Sciences, Materials Engineering, Materials Science +16

Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

Yasuto Hijikata, Hiroyuki Yaguchi, M. Yoshikawa et al. · Applied Surface Science · 2001 · 123 citations

Natural Sciences, Materials Engineering, Materials Science +17