IEEE Electron Device Letters · 2015 · 76 citations · 10 references
EngineeringElectrical EngineeringMaterials EngineeringCircuit TheoryComputational ElectromagneticsTransport PhenomenaElectrical ConductivityTransmission LinesLossy Transmission LinesProcess Flow ModelingProcess Flow SimulationTransmission Line AnalysisTransmission Line ModelingTransmission Line Theory
Accurate determination of contact resistivities ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\rho_{c}}$ </tex-math></inline-formula> ) below <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1 \times 10^{-8}\Omega \cdot \text {cm}^{2}$ </tex-math></inline-formula> is challenging. Among the frequently applied transmission line models (TLMs), circular TLM (CTLM) has a simple process flow, while refined TLM (RTLM) has a high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho _{c}$ </tex-math></inline-formula> accuracy at the expense of a more complex fabrication. In this letter, we will present a novel model—multiring CTLM (MR-CTLM) , which combines the advantages of a simple process and a high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho _{c}$ </tex-math></inline-formula> extraction resolution. We fabricated ultralow- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho _{c}$ </tex-math></inline-formula> Ti/n-Si contacts and demonstrated the capability of MR-CTLM to extract the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho _{c}$ </tex-math></inline-formula> as low as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6.2 \times 10^{-9}~\Omega \cdot {\rm cm}^{2}$ </tex-math></inline-formula> with high precision.
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Factors controlling the resistance of Ohmic contacts to <i>n</i>-InGaAs
R. Dormaier, Suzanne E. Mohney · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012 · 78 citations
Natural Sciences, Materials Engineering, Materials Science +15
Contact resistance on diffused resistors
H.H. Berger · 1969 · 70 citations