Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT

Material characteristics and applications of transparent amorphous oxide semiconductors

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Natural Sciences, Materials Engineering, Materials Science +12

High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

Jae Sang Lee, Seongpil Chang, Sang‐Mo Koo et al. · IEEE Electron Device Letters · 2010 · 294 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

M. E. Lopes, Henrique L. Gomes, Maria C. R. Medeiros et al. · Applied Physics Letters · 2009 · 232 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

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Natural Sciences, Materials Science, Physics +17

Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

Yi‐Chun Chen, Ting‐Chang Chang, Hung-Wei Li et al. · Applied Physics Letters · 2010 · 126 citations

Natural Sciences, Electrical Engineering, Materials Science +17