Applied Physics Letters · 1985 · 49 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsDefects In Electronic MaterialsSemiconductor Crystal GrowthSemiconductor DefectsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsDefect DensityDefect Levels In SemiconductorsLattice MismatchMolecular Beam EpitaxyPhotoluminescenceSemiconductor CharacterizationSemiconductor CrystallographyX-ray Diffraction Analysis
(111) oriented CdTe has been grown on (001) oriented GaAs substrates by molecular beam epitaxy. Double crystal x-ray diffraction rocking curve and photoluminescence measurements indicate that the CdTe is of exceptional quality despite the large lattice mismatch of 14.6%.
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Growth of CdTe films on sapphire by molecular beam epitaxy
T. H. Myers, Y. C. Lo, R. N. Bicknell et al. · Applied Physics Letters · 1983 · 84 citations
Natural Sciences, Materials Engineering, Materials Science +17