Applied Physics Letters · 1981 · 180 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsThin FilmsEpitaxial GrowthSemiconductor PhysicsSemiconductor Thin FilmsStrain EngineeringThin Film StrainThin-film MaterialsElastic StrainEpitaxial Film GrowthEpitaxial MaterialsGrain BoundariesHeteroepitaxyLattice MismatchMolecular Beam EpitaxyX-ray Diffraction Analysis
Heteroepitaxial films on CdTe have been grown by molecular beam epitaxy (MBE) on InSb (001) orientation substrates at growth temperatures ≲220 °C. The structural perfection of these films has been explored by double crystal x-ray diffraction techniques, which reveal that films of ∼1 μm thick grown at 150 and 220 °C are free of low-angle grain boundaries and are exactly lattice matched to the InSb substrate. The lattice parameter mismatch is accommodated by misfit elastic strain.
6