W. Nijman

X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers

W. Bartels, W. Nijman · Journal of Crystal Growth · 1978 · 238 citations

Materials Science, Engineering, X-ray Diffraction +5

Electron lifetime and diffusion constant in germanium-doped gallium arsenide

G.A. Acket, W. Nijman, H. 't Lam · Journal of Applied Physics · 1974 · 78 citations

Optical Materials, Engineering, Hole Concentration P +16

Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substrates

W. Bartels, W. Nijman · Journal of Crystal Growth · 1977 · 33 citations

Dislocation Interaction, Misfit Dislocations, Gaas Substrates +6

The effect of interstital Frank partial dislocations on the gradual degradation of 1.3-μm double-channel planar buried heterostructure laser diodes

Bruno C. De Cooman, C. W. T. Bulle‐Lieuwma, J. A. de Poorter et al. · Journal of Applied Physics · 1990 · 21 citations

Optical Materials, Engineering, Laser Applications +21

High quality InGaAsPInP for multiple quantum well laser diodes grown by low-pressure OMVPE

P.J.A. Thijs, T. van Dongen, P.I. Kuindersma et al. · Journal of Crystal Growth · 1988 · 15 citations