C. W. T. Bulle‐Lieuwma

Author

Also Known As

C BULLELIEUWMA, C W T Bulle-Lieuwma, C. W. T. BULLE‐LIEUWMA, C. W. T. Bulle-Lieuwma, C. W. T. Bulle-lieuwma, C. W. T. Bulle‐Lieuwma, C.W.T. BULLE-LIEUWMA, C.W.T. Bulle-Lieuwma, C. W. T. Bulle‐Lieuwma, CWT Bulle-Lieuwma

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

Philips (Netherlands)NXP (Netherlands)Philips (Finland)Institute for Atomic and Molecular Physics Eindhoven University of Technology

About

C. W. T. Bulle‐Lieuwma is an author at Philips (Netherlands) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	32	2.7K
2	Applied Physics	24	30	1.9K
3	Chemistry	8	8	979
4	Chemical Engineering	3	3	692
5	Natural Sciences	2	2	77

C. W. T. Bulle‐Lieuwma

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Relating the Morphology of Poly(<i>p</i>‐phenylene vinylene)/Methanofullerene Blends to Solar‐Cell Performance J. K. J. van Duren, Xiaoniu Yang, J. Loos, Advanced Functional Materials EngineeringOrganic Solar CellPhotovoltaic DevicesChemistryPhotovoltaics	2004	649
Generation of misfit dislocations in semiconductors P. M. J. Marée, J. C. Barbour, J. F. van der Veen, Journal of Applied Physics SemiconductorsSemiconductor TechnologyEngineeringMisfit DislocationsPhysics	1987	473
Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam M.H.F. Overwijk, F.C. van den Heuvel, C. W. T. Bulle‐Lieuwma Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringTransmission Electron MicroscopyMicroscopyIntegrated CircuitsElectron Microscopy	1993	256
Characterization of polymer solar cells by TOF-SIMS depth profiling C. W. T. Bulle‐Lieuwma, W.J.H. van Gennip, J. K. J. van Duren, Applied Surface Science Materials ScienceEngineeringOrganic Solar CellPolymer CharacterizationPhotovoltaic System	2002	149
An STM study of Fe3O4(100) grown by molecular beam epitaxy J. M. Gaines, P.J.H. Bloemen, J. T. Kohlhepp, Surface Science Materials ScienceMagnetismEngineeringNanotechnologyOxide Electronics	1997	100
Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si C. W. T. Bulle‐Lieuwma, A. H. van Ommen, L.J. van IJzendoorn Applied Physics Letters EngineeringChemistryHeteroepitaxial Si/cosi2/siSilicon On InsulatorCo Implantation	1989	87
β-FeSi2 in (111)Si and in (001) Si formed by ion-beam synthesis D. J. Oostra, C. W. T. Bulle‐Lieuwma, D. E. W. Vandenhoudt, Journal of Applied Physics Materials EngineeringMaterials ScienceSemiconductorsβ-Fesi2 LayerIon-beam Synthesis	1993	78
Observation and analysis of epitaxial growth of CoSi2 on (100) Si C. W. T. Bulle‐Lieuwma, A. H. van Ommen, J. Hornstra, Journal of Applied Physics Materials ScienceMaterials EngineeringCrystal StructureIi-vi SemiconductorEngineering	1992	77
Ion-beam synthesis of a Si/β-FeSi2/Si heterostructure D. J. Oostra, D. E. W. Vandenhoudt, C. W. T. Bulle‐Lieuwma, Applied Physics Letters Materials ScienceIon ImplantationIon-beam SynthesisEngineeringCrystalline Defects	1991	71
Ion beam synthesis of heteroepitaxial Si/CoSi2/Si structures A. H. van Ommen, C. W. T. Bulle‐Lieuwma, J. J. M. Ottenheim, Journal of Applied Physics Materials ScienceIon ImplantationBuried LayersEngineeringCrystalline Defects	1990	70

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