T. van Dongen

High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

P.J.A. Thijs, L.F. Tiemeijer, P.I. Kuindersma et al. · IEEE Journal of Quantum Electronics · 1991 · 272 citations

Optical Pumping, Photonics, Engineering +13

Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers

P.J.A. Thiis, L.F. Tiemeijer, J.J.M. Binsma et al. · IEEE Journal of Quantum Electronics · 1994 · 212 citations

Photonics, Electrical Engineering, Engineering +13

High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm

P.J.A. Thijs, T. van Dongen · Electronics Letters · 1989 · 110 citations

Wide-bandgap Semiconductor, Engineering, Laser Applications +19

Interstitial and substitutional Zn in InP and InGaAsP

G. J. van Gurp, T. van Dongen, G. M. Fontijn et al. · Journal of Applied Physics · 1989 · 102 citations

Materials Science, Ii-vi Semiconductor, Substitutional Zn +13

On the electrochemistry of an anode stack for all-solid-state 3D-integrated batteries

Loïc Baggetto, Jos Oudenhoven, T. van Dongen et al. · Journal of Power Sources · 2008 · 101 citations

Materials Science, Electrical Engineering, Engineering +8