IEEE Journal of Quantum Electronics · 1994 · 212 citations · 117 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsQuantum Well DevicesQuantum WellsSemiconductor LasersSemiconductor PhysicsSemiconductor ReliabilityStrain EngineeringQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresSemiconductor Laser DiodesStrain EffectsStrained Layer StructuresStrained Quantum WellsStrained-layer Heterostructures
The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Theory of the linewidth of semiconductor lasers
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Defects in epitaxial multilayers
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