H. A. Mar

CdTe films on (001) GaAs:Cr by molecular beam epitaxy

H. A. Mar, K. T. Chee, N. Salansky · Applied Physics Letters · 1984 · 78 citations

Semiconductors, Materials Science, Electrical Engineering +13

Photoluminescence properties of nitrogen-doped ZnSe grown by molecular beam epitaxy

R. M. Park, H. A. Mar, N. Salansky · Journal of Applied Physics · 1985 · 62 citations

Optical Materials, Nitrogen-doped Znse Layers, Engineering +18

Study of the initial stages of growth of CdTe on (001)GaAs

H. A. Mar, N. Salansky, K. T. Chee · Applied Physics Letters · 1984 · 54 citations

Engineering, Semiconductor Nanostructures, Semiconductors +18

Determination of the energy distribution of interface traps in MIS systems using non-steady-state techniques

H. A. Mar, J.G. Simmons · Solid-State Electronics · 1974 · 42 citations

Engineering, Mechanical Systems, Systems Engineering +3

Molecular beam epitaxy growth of ZnSe on (100)GaAs by compound source and separate source evaporation: A comparative study

R. M. Park, H. A. Mar, N. Salansky · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 37 citations

Engineering, Znse Layers, Optoelectronic Devices +17