CdTe films on (001) GaAs:Cr by molecular beam epitaxy

Abstract

CdTe films grown by molecular beam epitaxy on a (001) GaAs with a 14% lattice mismatch were found to be a very good crystalline quality. The films were found by reflection high-energy electron diffraction analysis to be oriented (111) parallel to the surface of the (001) GaAs. Further, the [112̄] azimuth of CdTe and the [110] of GaAs were aligned. Photoluminescence studies suggest that the films are of high crystalline quality but peaks associated with impurities are observed in the spectra. The optimum growth temperature is about 250 °C.