Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Koji Muraki, S. Fukatsu, Y. Shiraki et al. · Applied Physics Letters · 1992 · 483 citations

Engineering, Materials Engineering, Materials Science +17

Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study

Edouard Alphandéry, R. J. Nicholas, N. J. Mason et al. · Applied Physics Letters · 1999 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +17

Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers

O. G. Lyublinskaya, Ya. V. Terent’ev, B. Ya. Meltser et al. · Journal of Crystal Growth · 2005 · 49 citations

Natural Sciences, Materials Science, Physics +16

Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix

O. G. Lyublinskaya, B. Ya. Meltser, D. D. Solnyshkov et al. · Applied Physics Letters · 2004 · 47 citations

Engineering, Materials Engineering, Materials Science +17

Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

S. Martini, A. A. Quivy, E. C. F. da Silva et al. · Applied Physics Letters · 2002 · 38 citations

Natural Sciences, Materials Science, Physics +17