Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix

Abstract

We report on molecular beam epitaxial growth of InSb submonolayer insertions in an InAs matrix, exhibiting intense mid-IR photoluminescence (PL) up to room temperature (RT). The InSb insertions are fabricated by an exposure of InAs surface to an antimony Sb4 flux. The nominal thickness of insertions grown at different temperatures (TS=400–485°C) ranges from 0.6 to 1.4 monolayer, as estimated from x-ray diffraction measurements of InSb∕InAs multiple submonolayer structures. This gives rise to the variation of the emission wavelength within the 3.9–4.3 μm range at RT. An integral PL intensity drop from 77 K to RT does not exceed 20 times.