Ya. V. Terent’ev - Concepedia

Author

Ya. V. Terent’ev

Also Known As

Terent'ev, Y., Terent'ev, Ya. V., Terent'ev, Ya.V., Y. Terent’ev, YA. V. TERENT'EV, Ya. V. Terent'ev, Ya. V. Terent’ev, Ya.V Terent'ev, Ya.V Terent’ev, Ya.V. Terent'ev

Publications

542

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Ioffe Institute Russian Academy of Sciences University of Regensburg Institute of Physics

About

Ya. V. Terent’ev is an author at Physico-Technical Institute specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	367
2	Applied Physics	13	15	367
3	Electrical Engineering	4	4	67
4	Natural Sciences	3	3	65
5	Chemistry	1	1	17

Ya. V. Terent’ev

Publications

377

Citations

H-Index

Page 1

	Year	Citations
Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers O. G. Lyublinskaya, Ya. V. Terent’ev, B. Ya. Meltser, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorEngineeringNanotechnologyApplied Physics	2005	49
Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix O. G. Lyublinskaya, B. Ya. Meltser, D. D. Solnyshkov, Applied Physics Letters Optical MaterialsEngineeringInsb InsertionsInsb Submonolayer InsertionsOptoelectronic Devices	2004	47
Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary B. Ya. Meltser, Ya. V. Terent’ev, L.G. Prokopova, Journal of Crystal Growth Materials ScienceMaterials EngineeringAluminium NitrideEngineeringPhysics	2005	43
Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures I. A. Buyanova, Ivan G. Ivanov, B. Monemar, Applied Physics Letters EngineeringMagnetic ResonanceTunable Laser SpectroscopySpintronic MaterialSpin Dynamic	2002	28
Temperature-dependent photoluminescence from type-II InSb∕InAs quantum dots O. G. Lyublinskaya, B. Ya. Meltser, Ya. V. Terent’ev, Journal of Applied Physics Insb-enriched Quantum DotsEngineeringInsb InsertionOptoelectronic DevicesLuminescence Property	2006	28
Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation Peter Olbrich, C. Zoth, P. Lutz, Physical Review B Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringSpin-charge ConversionSpintronic Material	2012	22
Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well I. V. Sedova, S. V. Sorokin, Ya. V. Terent’ev, Physical Review B Categoryquantum ElectronicsEngineeringOptoelectronic DevicesEnergy Level CalculationsSemiconductor Nanostructures	2005	22
A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy Sergei Ivanov, V. A. Kaygorodov, S. V. Sorokin, Applied Physics Letters EngineeringCdmgse/inas InterfaceLaser ApplicationsLaser MaterialOptoelectronic Devices	2003	22
Wet sulfur passivation of GaSb(100) surface for optoelectronic applications E. V. Kunitsyna, T. V. L’vova, Ya. V. Terent’ev, Applied Surface Science EngineeringSurface AnalysisOptoelectronic MaterialsWet Sulfur PassivationApplied Physics	2010	20
InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm M. Yu. Chernov, O. S. Komkov, D. D. Firsov, Journal of Crystal Growth Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2017	19

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