B. Monemar

On the lattice parameters of GaN

Vanya Darakchieva, B. Monemar, Akira Usui · Applied Physics Letters · 2007 · 120 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +14

Optical properties of InN—the bandgap question

B. Monemar, A. Kasic · Superlattices and Microstructures · 2005 · 103 citations

Photonics, Optical Materials, Engineering +5

Deformation potentials of the E1(TO) and E2 modes of InN

Vanya Darakchieva, E. Valcheva, Tania Paskova et al. · Applied Physics Letters · 2004 · 51 citations

Materials Science, Engineering, Physics +9

Nearly stress-free substrates for GaN homoepitaxy

Martin Hermann, D. Gogova, D. Siche et al. · Journal of Crystal Growth · 2006 · 50 citations

Electrical Engineering, Engineering, Applied Physics +3

Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy

J. P. Bergman, T. Paskova, B. Monemar · Applied Physics Letters · 1999 · 50 citations

Wide-bandgap Semiconductor, Engineering, Luminescence Property +16