B. Ya. Meltser

Radiative recombination in type-II GaSb/GaAs quantum dots

Fariba Hatami, N. N. Ledentsov, Marius Grundmann et al. · Applied Physics Letters · 1995 · 324 citations

Engineering, Materials Engineering, Materials Science +17

Radiative states in type-II GaSb/GaAs quantum wells

N. N. Ledentsov, J. Böhrer, Max Beer et al. · Physical review. B, Condensed matter · 1995 · 218 citations

Engineering, Materials Science, Physics +17

Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers

O. G. Lyublinskaya, Ya. V. Terent’ev, B. Ya. Meltser et al. · Journal of Crystal Growth · 2005 · 49 citations

Natural Sciences, Materials Science, Physics +16

Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix

O. G. Lyublinskaya, B. Ya. Meltser, D. D. Solnyshkov et al. · Applied Physics Letters · 2004 · 47 citations

Engineering, Materials Engineering, Materials Science +17

Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates

P. D. Altukhov, T. S. Argunova, A. A. Bakun et al. · Semiconductor Science and Technology · 1993 · 44 citations

Engineering, Materials Engineering, Materials Science +17