Japanese Journal of Applied Physics · 1988 · 10 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PassivationLift-offPassivation LayersPassivation Of SemiconductorsPassivation TechniquesPhotochemical PassivationSchottky Barrier DiodesSemiconductor Surface PreparationSurface Passivation Layers
The effect of photochemical surface passivation on Ti-GaAs diodes is demonstrated and discussed. The procedure described can be used to prepare a stable and repeatable GaAs surface for device processing. It is also compatible with lift-off technique.
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Unpinned (100) GaAs surfaces in air using photochemistry
S. D. Offsey, J. M. Woodall, A.C. Warren et al. · Applied Physics Letters · 1986 · 212 citations · Full text
Auger Characterization of Chemically Etched GaAs Surfaces
Ikuo Shiota, K. Motoya, T. Ohmi et al. · Journal of The Electrochemical Society · 1977 · 53 citations