The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 328 citations

Materials Science, Crack-free Gan, Wide-bandgap Semiconductor +11

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 138 citations

Electrical Engineering, Engineering, Applied Physics +2

Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers

A. Reiher, J. Bläsing, A. Dadgar et al. · Journal of Crystal Growth · 2002 · 117 citations

Materials Science, Materials Engineering, Electrical Engineering +10

MOVPE growth of GaN on Si – Substrates and strain

A. Dadgar, Peter Veit, F. Schulze et al. · Thin Solid Films · 2006 · 87 citations

Materials Science, Semiconductors, Electrical Engineering +6

Wet etching of GaN grown by molecular beam epitaxy on Si(111)

T. Palacios, F. Calle, M. Varela et al. · Semiconductor Science and Technology · 2000 · 71 citations

Materials Science, Aluminium Nitride, Electrical Engineering +15