The influence of AlN buffer layer thickness on the properties of GaN epilayer

X-ray line broadening from filed aluminium and wolfram

G.K. Williamson, W H Hall · Acta Metallurgica · 1953 · 10.2K citations

Natural Sciences, Materials Science, Spectroscopy +5

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Gallium vacancies and the yellow luminescence in GaN

Jörg Neugebauer, Chris G. Van de Walle · Applied Physics Letters · 1996 · 1.1K citations

Natural Sciences, Materials Science, Physics +17

Strain-related phenomena in GaN thin films

C. Kisielowski, Joachim Krüger, S. Ruvimov et al. · Physical review. B, Condensed matter · 1996 · 886 citations

Natural Sciences, Materials Engineering, Materials Science +17