Applied Physics Letters · 2007 · 19 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor DevicesAmorphous Electronic MaterialsAmorphous SemiconductorsDefectsDefects In Electronic MaterialsIon ImplantationSemiconductor DefectsAmorphous DefectsAmorphous RegionsDefect FormationDefects In Amorphous MaterialsElectronic DefectsImplantation-induced Defect FormationImpurity DefectsIon Implantation Effects
Ge implanted with 1MeV Si+ at a dose of 1×1015cm−2 creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects–end-of-range (EOR), regrowth-related, and clamshell defects. Unlike Si, no planar {311} defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550°C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the EOR damage.
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