Journal of Applied Physics · 1991 · 35 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsDevice CharacterizationIon ImplantationOxide SemiconductorsSemiconductor Device MaterialsSilicon MaterialsThin Film AnnealingOxide Layer EngineeringOxide Layer FormationOxide Layer GrowthRutherford Backscattering SpectrometrySecondary Ion Mass SpectrometrySiliconSilicon DioxideSilicon-on-insulator Technology
The characteristics of the formation and growth of buried oxide layers, formed by oxygen implantation into silicon at lower energies (50–140-keV 16O+), have been studied using secondary-ion mass spectrometry. Some results have been checked and compared with the results obtained by Rutherford backscattering and cross-sectional transmission electron microscopy. The critical doses, required to form a continuous buried stoichiometric oxide layer during implantation (ΦIc) and after annealing (ΦAc) have been estimated from experimental results. The thicknesses of the silicon overlayer (TASi) and buried silicon dioxide layer (TASiO2) for the annealed wafers have also been estimated. A set of semi-empirical formulas for ΦIc, ΦAc, TASi, and TASiO2 has been introduced. These formulas can be used to quickly calculate the critical doses and the layer thickness values.
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Mechanisms of buried oxide formation by ion implantation
Alice E. White, K. T. Short, J. L. Batstone et al. · Applied Physics Letters · 1987 · 76 citations
Ion beam synthesis of thin buried layers of SiO2 in silicon
P.L.F. Hemment, KJ Reeson, R.J. Chater et al. · Vacuum · 1986 · 64 citations