J. L. Batstone

Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films

C. Hayzelden, J. L. Batstone · Journal of Applied Physics · 1993 · 362 citations

Materials Science, Semiconductors, Epitaxial Growth +15

<i>In</i> <i>situ</i> transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon

C. Hayzelden, J. L. Batstone, R. C. Cammarata · Applied Physics Letters · 1992 · 114 citations

Materials Science, Semiconductors, Silicide-mediated Crystallization +14

Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductors

S. Myhajlenko, J. L. Batstone, H. J. Hutchinson et al. · Journal of Physics C Solid State Physics · 1984 · 98 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +13

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> study of the molecular beam epitaxy of CoSi2 on (111) Si by transmission electron microscopy and diffraction

J. M. Gibson, J. L. Batstone, R. T. Tung · Applied Physics Letters · 1987 · 82 citations

Semiconductors, Materials Science, Co2si Structure +14

Mechanisms of buried oxide formation by ion implantation

Alice E. White, K. T. Short, J. L. Batstone et al. · Applied Physics Letters · 1987 · 75 citations

Materials Science, Ion Implantation, Engineering +14