H. J. Hutchinson

Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductors

S. Myhajlenko, J. L. Batstone, H. J. Hutchinson et al. · Journal of Physics C Solid State Physics · 1984 · 98 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +13

Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields

M. S. Skolnick, D.G. Hayes, P.E. Simmonds et al. · Physical review. B, Condensed matter · 1990 · 81 citations · Full text

Categoryquantum Electronics, Charge Excitations, Engineering +22

Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures

M. S. Skolnick, P.E. Simmonds, D.G. Hayes et al. · Physical review. B, Condensed matter · 1990 · 44 citations

Photonics, Photoluminescence, Engineering +11

Observation of miniband transport in GaAs/Al0.33Ga0.67As superlattices

H. J. Hutchinson, A. W. Higgs, D C Herbert et al. · Journal of Applied Physics · 1994 · 26 citations

Room Temperature, Electrical Engineering, Superconducting Material +9

<i>X</i>- and Γ-related tunneling resonances in GaAs/AlAs double-barrier structures at high pressure

D. G. Austing, P. C. Klipstein, A. W. Higgs et al. · Physical review. B, Condensed matter · 1993 · 25 citations

Semiconductors, Quantum Science, Electrical Engineering +13