A. W. Higgs

Hysteresis in the electrical properties of orthorhombic tantalum trisulphide: Evidence for an incommensurate-commensurate charge-density wave transition?

A. W. Higgs, J. C. Gill · Solid State Communications · 1983 · 97 citations

Engineering, Physics, Natural Sciences +10

Investigation of impact ionization in thin GaAs diodes

S.A. Plimmer, J.P.R. David, D C Herbert et al. · IEEE Transactions on Electron Devices · 1996 · 83 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields

M. S. Skolnick, D.G. Hayes, P.E. Simmonds et al. · Physical review. B, Condensed matter · 1990 · 81 citations · Full text

Categoryquantum Electronics, Charge Excitations, Engineering +22

Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures

M. S. Skolnick, P.E. Simmonds, D.G. Hayes et al. · Physical review. B, Condensed matter · 1990 · 44 citations

Photonics, Photoluminescence, Engineering +11

Impact ionization in thin AlxGa1−xAs (<i>x</i>=0.15 and 0.30) <i>p</i>-<i>i</i>-<i>n</i> diodes

S.A. Plimmer, J. P. R. David, G.J. Rees et al. · Journal of Applied Physics · 1997 · 26 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +15