J. P. R. David

Gate-drain avalanche breakdown in GaAs power MESFET's

J. P. R. David, J.E. Sitch, M.S. Stern · IEEE Transactions on Electron Devices · 1982 · 50 citations

Device Modeling, Gate-drain Avalanche Breakdown, Electrical Engineering +11

Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model

S. C. Liew Tat Mun, Chee Hing Tan, Y. L. Goh et al. · Journal of Applied Physics · 2008 · 29 citations

Electric Field Gradient, Semiconductor Technology, Electrical Engineering +13

Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3<x<0.6)-GaAs heterojunction APDs

Chris Groves, C. K. Chia, R.C. Tozer et al. · IEEE Journal of Quantum Electronics · 2005 · 28 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12

Impact ionization in thin AlxGa1−xAs (<i>x</i>=0.15 and 0.30) <i>p</i>-<i>i</i>-<i>n</i> diodes

S.A. Plimmer, J. P. R. David, G.J. Rees et al. · Journal of Applied Physics · 1997 · 26 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +15

Temperature-insensitive long-period fiber gratings

Justin B. Judkins, J. Renee, J. P. R. David et al. · 1996 · 23 citations

Transient Grating, Photonics, Waveguides +15