Temperature and current dependences of electroluminescence from InGaN/GaN multiple quantum wells

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Engineering, Materials Engineering, Materials Science +17

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources

Petr G. Eliseev, P. Perlin, Jinhyun Lee et al. · Applied Physics Letters · 1997 · 543 citations

Engineering, Electrical Engineering, Materials Science +17

Exciton localization in InGaN quantum well devices

Shigefusa F. Chichibu, Takayuki Sota, Kazumi Wada et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 241 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures

Takashi Mukai, Hiroki Narimatsu, Shuji Nakamura · Japanese Journal of Applied Physics · 1998 · 178 citations

Engineering, Electrical Engineering, Materials Science +17