Materials Science and Engineering B · 2004 · 12 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCompound SemiconductorsEpitaxial GrowthOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsElectronic Structure AnalysisGallium Nitride Crystal GrowthHeteroepitaxyMolecular Beam EpitaxyQuantum Well Structures
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Band Anticrossing in GaInNAs Alloys
W. Walukiewicz, Joel W. Ager, E. E. Haller et al. · Physical Review Letters · 1999 · 1.6K citations
Bowing parameter of the band-gap energy of GaNxAs1−x
Wengang Bi, C. W. Tu · Applied Physics Letters · 1997 · 403 citations