Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2006 · 19 citations · 0 references
EngineeringElectron-beam LithographyOptic DesignInverse Lithography TechnologyIntegrated CircuitsPhysical Design (Electronics)Production EnvironmentBeam LithographyNanolithographyElectronic PackagingOptical Proximity CorrectionNanolithography MethodComputer EngineeringMicroelectronicsOptical Tolerancing3D PrintingMicrofabricationApplied PhysicsTechnologyOptoelectronics
In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We discuss some specifics of ILT at chip-scale. We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing results from ILT-generated masks and OPC-generated masks for real-life layouts, in a production environment. In addition, we discuss issues related to complexity and manufacturability of ILT-generated masks.