Optical Proximity Correction

Optical Proximity Correction is a computational lithography technique used in mask design that modifies the mask pattern to compensate for optical distortions and process effects during semiconductor fabrication, thereby improving the fidelity of the printed features on the wafer.

271

Publications

7.5K

Citations

968

Authors

167

Institutions

Publications per year

2017–2026

35

Variants

Opc

Authors

968

  1. XM
    Xu Ma

    Beijing Institute of Technology, China

    16 publications · 654 citations

    15

    h-index

  2. BY
    Bei Yu

    Chinese University of Hong Kong, Hong Kong SAR China

    14 publications · 582 citations

    13

    h-index

  3. GR
    Gonzalo R. Arce

    University of Delaware, United States

    12 publications · 508 citations

    12

    h-index

  4. DZ
    David Z. Pan

    The University of Texas at Austin, United States

    12 publications · 371 citations

    11

    h-index

  5. YM
    Yuzhe Ma

    Chinese University of Hong Kong, Hong Kong SAR China

    10 publications · 425 citations

    10

    h-index

1–5 of 968