Optical Proximity Correction
Optical Proximity Correction is a computational lithography technique used in mask design that modifies the mask pattern to compensate for optical distortions and process effects during semiconductor fabrication, thereby improving the fidelity of the printed features on the wafer.
271
Publications
7.5K
Citations
968
Authors
167
Institutions
Publications per year
2017–2026
35
Variants
Opc
Parents
271
Projection optical lithography
M. Rothschild · Materials Today · 2005 · 105 citations · Full text
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IBM (United States)
Armonk, United States
14 h-index
95 publications
2.8K citations
The University of Texas at Austin
Austin, United States
14 h-index
39 publications
1.2K citations

Beijing Institute of Technology
Beijing, China
13 h-index
43 publications
1.2K citations
Chinese University of Hong Kong
Hong Kong, Hong Kong
11 h-index
41 publications
1.7K citations
Toshiba (Japan)
Tokyo, Japan
11 h-index
43 publications
859 citations
University of California, Berkeley
Berkeley, United States
11 h-index
24 publications
914 citations
University of California San Diego
San Diego, United States
10 h-index
22 publications
484 citations
IMEC
Leuven, Belgium
10 h-index
29 publications
691 citations
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104 publications · 2.4K citations
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17 publications · 596 citations
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27 publications · 565 citations
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12 publications · 226 citations
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10 publications · 492 citations
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