Refractory metal silicide formation by ion implantation

First phase nucleation in silicon–transition-metal planar interfaces

R. M. Walser, R. W. Bené · Applied Physics Letters · 1976 · 503 citations

Materials Science, Low Temperatures, Engineering +10

Ion-beam-induced silicide formation

B-Y. Tsaur, Z. L. Liau, J. W. Mayer · Applied Physics Letters · 1979 · 135 citations

Materials Science, Ion Implantation, Engineering +12

Application of Auger electron spectroscopy to studies of the silicon/silicide interface

J. A. Roth, C.R. Crowell · Journal of Vacuum Science and Technology · 1978 · 126 citations

Engineering, Chemistry, Silicon On Insulator +18

Analysis of thin-film structures with nuclear backscattering and x-ray diffraction

J. W. Mayer, K. N. Tu · Journal of Vacuum Science and Technology · 1974 · 99 citations

Materials Science, Engineering, Surface Science +14

1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspective

B. L. Crowder, S. Zirinsky · IEEE Journal of Solid-State Circuits · 1979 · 70 citations

Materials Engineering, Electrical Engineering, Engineering +13