Investigation of oxide layer removal mechanism using reactive gases

Highly selective etching of silicon nitride over silicon and silicon dioxide

B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 105 citations

Engineering, Materials Engineering, Materials Science +14

Principles of wet chemical processing in ULSI microfabrication

H. Kikyuama, Nobuhiko Miki, K. Saka et al. · IEEE Transactions on Semiconductor Manufacturing · 1991 · 89 citations

Engineering, Materials Engineering, Materials Science +17

Damage-free selective etching of Si native oxides using NH3/NF3 and SF6/H2O down-flow etching

Hitoshi Nishino, N. Hayasaka, H. Okano · Journal of Applied Physics · 1993 · 82 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dry Cleaning Technology for Removal of Silicon Native Oxide Employing Hot NH₃/NF₃Exposure

Hiroki Ogawa, Tomoharu Arai, M Yanagisawa et al. · Japanese Journal of Applied Physics · 2002 · 72 citations

Engineering, Materials Engineering, Materials Science +17

Fluorocarbon high density plasmas. VII. Investigation of selective SiO2-to-Si3N4 high density plasma etch processes

Ying Zhang, G. S. Oehrlein, F. H. Bell · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 64 citations

Natural Sciences, Materials Engineering, Materials Science +16